PHYSICS OF BSF SOLAR CELLS AT HIGH LEVELS OF ILLUMINATIONDHARIWAL SR; GADRE R; MATHUR RK et al.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 4; PP. 105-107; BIBL. 5 REF.Article

RAPID FIRING OF PRINTED PASTES FOR BSF SOLAR CELL UNDER HIGH INTENSITY LIGHT SOURCEOKAMOTO K; NAMMORI T; NUNOI T et al.1982; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 16/1982-09-27/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1982; PP. 818-823; BIBL. 1 REF.Conference Paper

DETERMINATION OF THE MINORITY CARRIER LIFETIME IN THE BASE OF A BACK-SURFACE FIELD SOLAR CELL BY FORWARD CURRENT-INDUCED VOLTAGE DECAY AND PHOTOVOLTAGE DECAY METHODSMURALIDHARAN R; JAIN SC; UMA JAIN et al.1982; SOL. CELLS; ISSN 0379-6787; CHE; DA. 1982; VOL. 6; NO 2; PP. 157-176; BIBL. 26 REF.Article

THEORY OF BACK SURFACE FIELD SILICON SOLAR CELLSDHARIWAL SR; KULSHRESHTA AP.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 12; PP. 1161-1165; BIBL. 12 REF.Article

COMPATIBILITY OF BSR AND BSF SOLAR CELL TECHNOLOGYRASCH KD; ROY K; SCHILLING R et al.1980; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 1980. 14/1980/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1980; PP. 141-145; BIBL. 5 REF.Conference Paper

MIS SOLAR CELLS WITH DIFFUSED BACK SURFACE FIELDS, AND DIFFUSED JUNCTION SOLAR CELLS WITH MIS BACK SURFACE FIELDSTARR NG; PULFREY DL; ILES PA et al.1980; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 1980. 14/1980/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1980; PP. 1345-1349; BIBL. 6 REF.Conference Paper

COMPUTER ANALYSIS OF BACK-SURFACE FIELD SILICON SOLAR CELLS. = ANALYSE SUR ORDINATEUR DE CELLULES SOLAIRES AU SILICIUM A CHAMP DE SURFACE ARRIEREMICHEL J; MIRCEA A; FABRE E et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 11; PP. 5043-5045; BIBL. 9 REF.Article

HIGH PERFORMANCE BSF SILICON SOLAR CELL WITH FIRE THROUGH CONTACTS PRINTED ON AR COATINGNUNORI T; NAMMORI T; SAWAI H et al.1980; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 1980. 14/1980/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1980; PP. 805-810; BIBL. 10 REF.Conference Paper

THE SPECTRAL RESPONSE OF BSF SILICON SOLAR CELLS FABRICATED THROUGH MASKED ION IMPLANTATIONSILARD A; MARINESCU R; TAZLAUANU M et al.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 6; PP. 164-166; BIBL. 4 REF.Article

REDUCTION OF SOLAR CELL EFFICIENCY BY BULK DEFECTS ACROSS THE BACK-SURFACE-FIELD JUNCTIONSAH CT; YAMAKAWA KA; LUTWAK R et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 4; PP. 3278-3290; BIBL. 4 REF.Article

HIGH EFFICIENCY P⁺-N-N⁺ BACK-SURFACE-FIELD SILICON SOLAR CELLSFOSSUM JG; BURGESS EL.1978; APPL. PHYS. LETTERS.; USA; DA. 1978; VOL. 33; NO 3; PP. 238-240; BIBL. 9 REF.Article

Electron-beam induced current characterization of back-surface field solar cells using a chopped scanning electron microscope beamLUKE, K. L; LI-JEN CHENG.Journal of applied physics. 1984, Vol 55, Num 2, pp 555-559, issn 0021-8979Article

Application of low high junction to solar cellsJAIN, S. C.Physics of semiconductor devices. International workshop. 1982, pp 394-407Conference Paper

A SIMPLE THEORY OF BACK-SURFACE-FIELD (BSF) SOLAR CELLSVON ROOS O.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 8; PP. 5371-5374; BIBL. 4 REF.Article

THE DEGRADATION OF HIGH-INTENSITY BSF SOLAR-CELL FILL FACTORS DUE TO A LOSS OF BASE CONDUCTIVITY MODULATIONSCHWARTZ RJ; LUNDSTROM MS; NASBY RD et al.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 3; PP. 264-269; BIBL. 12 REF.Article

PHYSICS UNDERLYING THE PERFORMANCE OF BACK-SURFACE-FIELD SOLAR CELLSFOSSUM JG; NASBY RD; SHING CHONG PAO et al.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 4; PP. 785-791; BIBL. 17 REF.Article

Optimization of high-efficiency n⁺-p-p⁺ back-surface-field silicon solar cellsMORITA, K; SAITOH, T; UEMATSU, T et al.Japanese journal of applied physics. 1987, Vol 26, Num 5, pp 547-549, issn 0021-4922, 2Article

Low alpha, boron BSF solar cellGILLANDERA, M; MARDESICH, N; GARLICK, J et al.Photovoltaic specialists conference. 17. 1984, pp 138-143Conference Paper

Back-surface field design for n⁺p GaAs cellsDEMOULIN, P. D; LUNDSTROM, M. S; SCHWARTZ, R. J et al.Solar cells. 1987, Vol 20, Num 3, pp 229-236, issn 0379-6787Article

A new high-efficiency GaAs solar cell structure using a heterostructure back-surface fieldGALE, R. P; FAN, J. C. C; TURNER, G. W et al.Photovoltaic specialists conference. 17. 1984, pp 1422-1425Conference Paper